| 000 | 00878 a2200181 4500 | ||
|---|---|---|---|
| 005 | 20250829160652.0 | ||
| 020 | _a038771751X | ||
| 020 | _a9780387717517 | ||
| 082 | 0 | 4 |
_a621.381 _bFIN |
| 245 | 0 | 0 |
_aFinfets and other multi-gate transistors _cEdited by Jean Pierre Colinge |
| 260 |
_aIreland : _bSpringer, _c2007. |
||
| 300 | _avii, 339 p. | ||
| 500 | _aHB | ||
| 520 | _aThis book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. | ||
| 650 |
_aElectronics _983102 |
||
| 700 | 1 |
_aColinge, J. P. (ed.) _983103 |
|
| 942 | _cBK | ||
| 999 |
_c30903 _d30903 |
||