| 000 | 00402nam a2200157Ia 4500 | ||
|---|---|---|---|
| 020 | _a0750691727 | ||
| 082 |
_a620.193 _bSTC |
||
| 100 |
_aStrausser, Yale _972665 |
||
| 245 |
_aCharacterization in silicon processing _c Yale Strausser |
||
| 260 |
_aBoston: _bButterworth-Heinemann, _c1993. |
||
| 300 | _bxiii, 240p. | ||
| 500 | _aHB | ||
| 546 | _aEng | ||
| 650 |
_aSurface chemistry _932883 |
||
| 942 | _cBK | ||
| 999 |
_c7631 _d7631 |
||