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Finfets and other multi-gate transistors Edited by Jean Pierre Colinge

Contributor(s): Publication details: Ireland : Springer, 2007.Description: vii, 339 pISBN:
  • 038771751X
  • 9780387717517
Subject(s): DDC classification:
  • 621.381 FIN
Summary: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
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Item type Current library Call number Status Date due Barcode
Books Central Library Allama Iqbal Open University Islamabad General Stacks 621.381 FIN (Browse shelf(Opens below)) Available 111266

HB

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

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