Finfets and other multi-gate transistors Edited by Jean Pierre Colinge

Contributor(s):

Colinge, J. P. (ed.)

Publication details: Ireland : Springer, 2007.Description: vii, 339 pISBN:

038771751X
9780387717517

Subject(s):

Electronics

DDC classification:

621.381 FIN

Summary: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

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Item type	Current library	Call number	Status	Date due	Barcode
Books	Central Library Allama Iqbal Open University Islamabad General Stacks	621.381 FIN (Browse shelf(Opens below))	Available		111266

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This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

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