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Evaluation of nitrogen defects in GaN by ion beam technique: : MPhil Physics

Publisher: Islamabad: AIOU, 2013Description: iv, 42p.Subject(s): Material Science

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Item type	Location	Call number	Status	Date due	Barcode	Item holds
Thesis	Central Library AIOU Islamabad Allama Iqbal Open University Central Library Research Repository (Theses Section)	530 MEE (Browse shelf)	Not for loan		118044

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Previous	530 IKS Study of aluminium nitride (AIN) the film modification by copper (CU) ION implantation	530 KAD Detection of heavy metals in incinerated waste of hospital by using laser induced breakdown spectroscopy	530 MAS Study of some boarate based binary glasses	530 MEE Evaluation of nitrogen defects in GaN by ion beam technique:	530 MUM A measure of ductility of aluminum-copper alloy at high temperatures (up to 500k) by using the universal testing machine:	530 MUP Prepration and characterization of cdsete thin films for application in solar cells	530 NUI Ion implantation of GaN by ion beam technique	Next

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