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Ion implantation of GaN by ion beam technique : MPhil Physics

Publisher: Islamabad: AIOU, 2013Description: vi, 51p.Subject(s): Material science

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Item type	Location	Call number	Status	Date due	Barcode	Item holds
Thesis	Central Library AIOU Islamabad Allama Iqbal Open University Central Library Research Repository (Theses Section)	530 NUI (Browse shelf)	Not for loan		118045

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Previous	530 MEE Evaluation of nitrogen defects in GaN by ion beam technique:	530 MUM A measure of ductility of aluminum-copper alloy at high temperatures (up to 500k) by using the universal testing machine:	530 MUP Prepration and characterization of cdsete thin films for application in solar cells	530 NUI Ion implantation of GaN by ion beam technique	530 RAD Deposition and characterization of ain thin film:	530 TAU The use of an information processing model to design and evaluate a physics undergraduate laboratory	530 ZAR Role of alumina in improving the characteristics of lead borate glass system	Next

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